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For 0.35-pm technology, the junction depth (before silicidation) is about 100nm. If you want to leave 50 nm of Si after silicidation to ensure low leakage current, how much TISi2 is formed and how much Ti is needed if all is consumed?
For 0.35-pm technology, the junction depth (before silicidation) is about 100nm. If you want to…
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